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| Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 10.00.3 Unit: mm 8.50.2 6.00.5 3.40.3 1.00.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 60 80 60 80 7 12 8 45 1.3 150 -55 to +150 Unit V 1.50.1 1.5max. 10.5min. 2.0 1.1max. 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 10.00.3 emitter voltage 2SD1262A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 1.5-0.4 3.0-0.2 V A A W C C 2.0 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1262 2SD1262A (TC=25C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = -8mA, VCC = 50V 20 0.5 4 1 60 80 1000 500 1.5 2 V V MHz s s s 10000 min typ max 100 100 2 Unit A mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification R Q P 1000 to 2500 2000 to 5000 4000 to 10000 Internal Connection B C Rank hFE1 E 4.40.5 14.70.5 +0.4 +0 1 Power Transistors PC -- Ta 50 12 (1) 40 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C 10 2SD1262, 2SD1262A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C (3) (2) (1) Collector power dissipation PC (W) Collector current IC (A) 3 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2 30 1 6 0.3 20 4 0.1 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0.03 0 0 1 2 3 4 5 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=500 TC=100C 3 25C -25C VBE(sat) -- IC 100000 hFE -- IC IC/IB=500 VCE=3V Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 30000 TC=100C 25C -25C 3 TC=-25C 1 100C 25C 10000 1 3000 1000 300 100 30 10 0.1 0.3 0.3 0.1 0.1 0.03 0.03 0.01 0.1 0.3 1 3 10 30 0.01 0.1 0.3 1 3 10 30 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C ICP 10 IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms t=10ms Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 1 2SD1262A 2SD1262 10-1 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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